10.1186/2228-5326-3-18

Magnetoresistance of non-180° domain wall in the presence of electron-photon interaction

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  • Roya Majidi*1,
  1. Department of Physics, Shahid Rajaee Teacher Training University, Lavizan, Tehran, 16788-15811, IR
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Published in Issue 2013-04-04

How to Cite

Majidi, R. (2013). Magnetoresistance of non-180° domain wall in the presence of electron-photon interaction. International Nano Letters, 3(1 (December 2013). https://doi.org/10.1186/2228-5326-3-18
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Abstract

Abstract In the present paper, influence of photon on resistance of non-180° domain wall in metallic magnetic nanowires has been studied using the semiclassical approach. The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Néel-type domain wall between two ferromagnetic domains with relative magnetization angle less than 180° is considered. By increasing this angle, the contribution of the domain wall in the resistivity of the nanowire becomes considerable. It is also found that the fundamental contribution of the domain wall in resistivity can be controlled by propagating photon. These results are valuable in designing spintronic devices based on magnetic nanowires.

Keywords

  • Magnetoresistance,
  • Non-180° Néel-type domain wall,
  • Metallic nanowire,
  • Magnetization rotation angle,
  • Electron-photon interaction
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