10.1186/2228-5326-3-10

Spectroscopic-ellipsometric study of native oxide removal by liquid phase HF process

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  • Anil Sudhakar Kurhekar*1,
  • Prakash R Apte2,
  1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, IN Department of Electronics Engineering, Datta Meghe College of Engineering, Mumbai, IN
  2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, IN
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Published in Issue 2013-02-22

How to Cite

Kurhekar, A. S., & Apte, P. R. (2013). Spectroscopic-ellipsometric study of native oxide removal by liquid phase HF process. International Nano Letters, 3(1 (December 2013). https://doi.org/10.1186/2228-5326-3-10
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Abstract

Abstract Ex situ spectroscopic ellipsometry (SE) measurements have been employed to investigate the effect of liquid-phase hydrofluoric acid (HF) cleaning on Si<100> surfaces for microelectromechanical systems application. The hydrogen terminated (H-terminated) Si surface was realized as an equivalent dielectric layer, and SE measurements are performed. The SE analyses indicate that after a 20-s 100:5 HF dip with rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed and analyzed by the ex-situ SE. Evidence for desorption of the H-terminated Si surface layer is studied using Fourier transform infrared spectroscopy and ellipsometry, and discussed. This piece of work explains the usage of an ex situ , non-destructive technique capable of showing state of passivation, the H-termination of Si<100> surfaces.

Keywords

  • Silicon<100>,
  • Spectroscopy,
  • Ellipsometry,
  • Native oxide removal,
  • FTIR,
  • Cleavage,
  • MEMS
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