10.1007/s40089-014-0101-z

Broadband optical absorption measurement of silicon nanowires for photovoltaic solar cell applications

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  • Md Ali Asgar1,
  • Mehedhi Hasan2,
  • Md Fazlul Huq*3,
  • Zahid Hasan Mahmood4,
  1. Department of Electrical and Electronic Engineering, Hamdard University Bangladesh, Sonargaon, Narayangonj, 1440, BD
  2. Department of Electrical and Electronic Engineering, Shahjalal University of Science and Technology, Kumargaon, Sylhet, 3114, BD
  3. Department of Information and Communication Technology, Mawlana Bhashani Science and Technology University, Santosh, Tangail, 1902, BD
  4. Department of applied Physics Electronics and Communication Engineering, University of Dhaka, Dhaka, 1000, BD
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Published in Issue 2014-01-02

How to Cite

Asgar, M. A., Hasan, M., Huq, M. F., & Mahmood, Z. H. (2014). Broadband optical absorption measurement of silicon nanowires for photovoltaic solar cell applications. International Nano Letters, 4(1 (March 2014). https://doi.org/10.1007/s40089-014-0101-z
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Abstract

Abstract The broadband optical absorption properties of silicon nanowire films fabricated by electroless metal deposition technique followed by HF/Fe(NO 3 ) 3 solution-based chemical etching at room temperature on p-type silicon substrates have been measured and we have found higher absorption than that of the solid thin films of equivalent thickness. The observed behavior is effectively explained by light scattering and light trapping, though some of the observed absorption is due to a high density of surface states in the nanowire films. The synthesized structures absorbed more than 82% of incident radiation in case of Cu-deposited silicon nanowires, whereas for Ag it was a maximum of 83%, which is much greater than that of the bulk silicon as they absorbed a maximum of 43% of the radiation.

Keywords

  • Silicon nanowires,
  • Electroless metal deposition,
  • Photovoltaic, Optical absorption
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