10.1007/s40089-014-0118-3

Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET

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  • Mohammad Javad Hejazifar1,
  • Seyed Ali Sedigh Ziabari*2,
  1. Department of Electrical Engineering, Guilan Science and Research Branch, Islamic Azad University, Guilan, IR
  2. Department of Electrical Engineering, Roudbar Branch, Islamic Azad University, Roudbar, IR
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Published in Issue 2014-08-26

How to Cite

Hejazifar, M. J., & Sedigh Ziabari, S. A. (2014). Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET. International Nano Letters, 4(3 (September 2014). https://doi.org/10.1007/s40089-014-0118-3
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Abstract

Abstract In this work we investigate the n-type single halo implantation in channel of lightly doped drain and source CNTFET (SH-LDDS-CNTFET) and propose the n-type double linear halo implantation in the channel of LDDS-CNTFET. These transistors are simulated with a non-equilibrium Green’s function method. We demonstrate that in the proposed structure the f T at the V GS ranges of 0–0.25 V and more than 0.42 V is much higher compared to the LDDS-CNTFET and SH-LDDS-CNTFET and the SH-LDDS-CNTFET, respectively. Finally, simulations demonstrate that the f T of the proposed transistor is more than the LDDS-CNTFET at a wide range of V GS , whereas the f T of SH-LDDS-CNTFET is more than the LDDS-CNTFET for narrow ranges of V GS .

Keywords

  • Carbon nanotube field effect transistor (CNTFET),
  • Cutoff frequency (fT),
  • Single halo (SH),
  • Double linear halo (DLH),
  • Non-equilibrium Green’s function (NEGF)
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References

  1. Iijima (1991) Helical microtubules of graphitic carbon (pp. 56-58) https://doi.org/10.1038/354056a0
  2. Javey et al. (2003) Ballistic carbon nanotube field-effect transistors (pp. 654-657) https://doi.org/10.1038/nature01797
  3. Javey et al. (2002) High dielectrics for advanced carbon nanotube transistors and logic (pp. 241-246) https://doi.org/10.1038/nmat769
  4. Lin et al. (2005) High performance carbon nanotube field-effect transistor with tunable polarities (pp. 481-489) https://doi.org/10.1109/TNANO.2005.851427
  5. Heinze et al. (2003) Electrostatic engineering of nanotube transistors for improved performance (pp. 5038-5040) https://doi.org/10.1063/1.1632531
  6. Hassaninia et al. (2008) Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts (pp. 980-985) https://doi.org/10.1016/j.sse.2008.01.021
  7. Yousefi et al. (2010) Numerical study of lightly doped drain and source carbon nanotube field effect transistors (pp. 765-771) https://doi.org/10.1109/TED.2010.2041282
  8. Arefinia and Orouji (2008) Impact of single halo implantation on the carbon nanotube field-effect transistor. A quantum simulation study (pp. 196-201) https://doi.org/10.1016/j.physe.2008.07.003
  9. Li and Zhang (2005) Simulation of ambipolar-to-unipolar conversion of carbon nanotube based field effect transistors (pp. 1415-1418) https://doi.org/10.1088/0957-4484/16/8/074
  10. Orouji and Arefinia (2009) Detailed simulation study of a dual material gate carbon nanotube field-effect transistor (pp. 552-557) https://doi.org/10.1016/j.physe.2008.10.005
  11. Orouji and Ahmadmiri (2010) Novel attributes and design considerations of source and drain regions in carbon nanotube transistors (pp. 1456-1462) https://doi.org/10.1016/j.physe.2009.11.118
  12. Kordrostami et al. (2012) Influence of channel and underlap engineering on the high-frequency and switching performance of CNTFETs (pp. 526-533) https://doi.org/10.1109/TNANO.2011.2181998
  13. Guo et al. (2004) Toward multi-scale simulations of carbon nanotube transistors (pp. 257-276) https://doi.org/10.1615/IntJMultCompEng.v2.i2.60
  14. Guo et al. (2004) Atomistic simulation of carbon nanotube field-effect transistors using non-equilibrium Green’s function formalism (pp. 373-377) https://doi.org/10.1007/s10825-004-7080-7
  15. Datta (1995) Cambridge University Press https://doi.org/10.1017/CBO9780511805776
  16. Yoon and Guo (2007) Analysis of strain effects in ballistic carbon nanotube FETs (pp. 1280-1287) https://doi.org/10.1109/TED.2007.896356
  17. Venugopal et al. (2002) Simulating quantum transport in nanoscale transistors: real versus mode-space approaches (pp. 3730-3739) https://doi.org/10.1063/1.1503165
  18. Alam and Lake (2006) Dielectric scaling of a zero-Schottky-barrier 5 nm gate carbon nanotube transistor with source/drain underlaps (pp. 24317-24324) https://doi.org/10.1063/1.2218764
  19. Monga et al. (2010) A compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs (pp. 901-907) https://doi.org/10.1016/j.mcm.2009.08.043
  20. Yoon et al. (2006) Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs (pp. 2467-2470) https://doi.org/10.1109/TED.2006.882034