10.57647/j.ijnd.2025.1602.13

Digital and analog performance enhancement of nanotube heterojunctionless tunnel FET using core-shell gate technology

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  • Behzad Rajabi1,
  • Mahdi Vadizadeh*2,
  • Seyed Ali Sedigh Ziabari 1,
  1. Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
  2. Department of Electrical Engineering, Karaj Branch, Islamic Azad University, Karaj, Iran
Digital and analog performance enhancement of nanotube heterojunctionless tunnel FET using core-shell gate technology

Received: 2024-08-15

Revised: 2024-10-02

Accepted: 2024-10-11

Published 2025-04-01

Copyright (c) 2024 Behzad Rajabi, Mahdi Vadizadeh, Seyed Ali Sedigh Ziabari (Author)

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

Rajabi, B., Vadizadeh, M., & Sedigh Ziabari , S. A. (2025). Digital and analog performance enhancement of nanotube heterojunctionless tunnel FET using core-shell gate technology. International Journal of Nano Dimension, 16(2 (April 2025). https://doi.org/10.57647/j.ijnd.2025.1602.13
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Abstract

This paper introduces a nanotube heterojunctionless tunneling field-effect transistor (NT-HJLTFET) that combines core-shell gate technology with a Ga0.8In0.2As/Ga0.85In0.15Sb heterojunction to enhance device performance. The NT-HJLTFET achieves an ION/IOFF ratio of 9.84×10¹³, an average subthreshold slope (SS) of 9.4 mV/dec, ION of 6.4 mA, transconductance (gm) of 17.5 mS, and unit gain cutoff frequency (fT) of 42.7 THz. These results represent a significant improvement in performance, including a nearly two orders of magnitude increase in ION, gm, and fT compared to silicon-based nanotube junctionless tunneling field-effect transistor (NT-JLTFET). The NT-HJLTFET also exhibits a five orders of magnitude enhancement in ION/IOFF and a 76% improvement in SS. Additionally, the presence of defects is shown to decrease fT, impacting the device's high-frequency response. These findings suggest that the NT-HJLTFET is a promising candidate for use in both digital and analog applications in integrated circuits.

Keywords

  • Heterojunction,
  • TFET,
  • Nonlocal BTBT,
  • Transconductance,
  • Work function
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