10.22034/ijnd.2021.681554

Design, simulation and analysis of high-K gate dielectric FinField effect transistor

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  • Marupaka Aditya1,
  • Karumuri Srinivasa Rao1,
  • Kondavitee Girija Sravani2,
  1. MEMS Research Center, Department of Electronics and Communication Engineering, KoneruLakshmaiah Education Foundation (Deemed to be University), Green Fields, Vaddeswaram, Andhra Pradesh, India.
  2. National MEMS Design Center, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, India.

Published in Issue 2024-02-03

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This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

Aditya, M., Srinivasa Rao, K., & Sravani, K. G. (2024). Design, simulation and analysis of high-K gate dielectric FinField effect transistor. International Journal of Nano Dimension, 12(3). https://doi.org/10.22034/ijnd.2021.681554
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Abstract

The devices with additional gates like Fin Field effect transistor (FinFET) provide higher control on subthreshold parameters and are favorable for Ultra large-scale integration. Also, these structures provide high control on current through the channel and with minimum leakage. In this paper we designed a FinFET with high-K gate dielectric material i.e Hafnium oxide as gate oxide. A comparison of similar sized transistor with Air and Silicon dioxide as gate material is performed. The comparison is mainly in terms of performance parameters like transconductance, subthreshold slope, and drain current characteristics. There is an increase in ON current on using a high-K dielectric material and subsequently an improvement in other parameters like subthreshold slope, transconductance and intrinsic gain.

Keywords

  • FinFET,
  • Hafnium Oxide,
  • High-k Dielectric,
  • Subthreshold Slope,
  • Transconductance
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