10.57647/

Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study

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  • Soheila Moghadam1,
  • Seyed Saleh Ghoreishi1,
  • Reza Yousefi1,
  • Habib Adarang1,
  1. Department of Electrical Engineering, Nour Branch, Islamic Azad University, Nour, Iran.

Published in Issue 2024-02-07

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How to Cite

Moghadam, S., Ghoreishi, S. S., Yousefi, R., & Adarang, H. (2024). Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study. International Journal of Nano Dimension, 11(3). https://doi.org/10.57647/
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Abstract

In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Greenâs function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the on- and off-currents are reduced, thought that reduction has a greater percentage in the off-current, resulting in the increase in the ON/OFF current ratio. Besides, the switching characteristics of the device including power-delay product (PDP) and intrinsic delay (Ï) have been studied.

Keywords

  • Band-Structure-Limited Velocity,
  • Intrinsic Delay (τ),
  • Mode-Space,
  • Power-Delay-Product (PDP),
  • Torsional Strain
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