MAKHLOUFI, R; BOUSSAHA, A; BENBOUTA, R; BAROURA, L. Anisotropic and Isotropic Elasticity Applied for the Study of Elastic Fields Generated by Interfacial Dislocations in a Heterostructure of InAs/(001)GaAs Semiconductors. Journal of Solid Mechanics, [S. l.], v. 13, n. 5, p. 503–512, 2021. Disponível em: https://oiccpress.com/jsm/article/view/12256. Acesso em: 21 aug. 2026.