10.1007/s40095-017-0243-7

A novel widespread Matlab/Simulink based modeling of InGaN double hetero-junction p-i-n solar cell

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  • Tarek Selmi*1,
  • Rabeb Belghouthi2,
  1. Department of Mechanical and Mechatronics, Faculty of Engineering, Sohar University, Sohar, OM
  2. Laboratoire d’Electronique et Microélectronique, Département de physique, Faculté des Sciences de Monastir, Monastir, 5019, TN
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Published in Issue 2017-08-02

How to Cite

Selmi, T., & Belghouthi, R. (2017). A novel widespread Matlab/Simulink based modeling of InGaN double hetero-junction p-i-n solar cell. International Journal of Energy and Environmental Engineering, 8(4 (December 2017). https://doi.org/10.1007/s40095-017-0243-7
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Abstract

Abstract This paper presents a model of a photovoltaic (PV) cell based on InGaN instead of regular cells made up of silicon, while polarization effects are considered. The model is constructed under Matlab/Simulink environment upon the equivalent electrical circuit of the PV cell. The way components of the equivalent electrical circuit are connected leads to establishing mathematical equations, thus, describing the behavior of the PV cell under different environmental and physical conditions. Once the PV cell model is validated by means of experimental results, it has been extended to build a model of a PV module made up of numerous cells interconnected in diverse potential configurations depending on the expected outputs in terms of current/voltage. The model has shown promising and accurate results and would aid researchers in the field of power electronics to consider it as a truthful PV generator (PVG).

Keywords

  • Matlab/Simulink,
  • Photovoltaic cell,
  • Temperature,
  • Insolation,
  • InGaN
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