OICC Press Majlesi Journal of Electrical Engineering 2345-3796 7 1 2024 02 25 A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering EN Arash Daghighi Department of of Electrical Engineering, Shahrekord University, Shahrekord, Iran Jafar Hoseini-Teshnizi Department of Electrical Engineering, IAU NajafAbad Branch GholamReza Amini Faculty of Engineering, Shahrekord University Journal Article 2024 02 25 A silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g. SiO2 is added on top of the buried insulator and partially covers the diamond. The second insulating material has lower electrical permittivity. Therefore the fringing field capacitance is smaller. Simulation results of 22 nm silicon-on-diamond transistor shows 18% improvement in DIBL comparing with conventional SOD structure. Lattice temperature increase of 5% is observed in the new structure compared with the conventional SOD.