OICC Press Majlesi Journal of Electrical Engineering 2345-3796 5 2 2024 02 25 Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX EN Parisa Tavanazadeh Unknown Arash Daghighi Department of of Electrical Engineering, Shahrekord University, Shahrekord, Iran Homayoun Mahdavi-Nasab Department of Electrical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Isfahan, Iran Journal Article 2024 02 25 In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.