OICC Press Majlesi Journal of Electrical Engineering 2345-3796 3 1 2024 02 28 Temperature Effect Investigation of 45nm Silicon-on-Diamond MOSFET Transistors 10.1234/mjee.v3i1.141 EN Arash Daghighi Department of of Electrical Engineering, Shahrekord University, Shahrekord, Iran Azar Farajzadeh Unknown Journal Article 2024 02 28 The self-heating effects (SHE) in 45nm Silicon-on-Insulator (SOI) and Silicon-on-Diamond (SOD) structures were investigated. As a result of high thermal conductivity of diamond, SHE is much less pronounced in SOD structures. This makes SOD transistors suitable for high power applications were large power density is required. It was shown that in SOD substrate the generated heat in active transistors not only spreads away in the substrate but also transfers to the auxiliary non-active transistors on the same die through the diamond film. Our hydrodynamic simulation results showed 8 times more off-current in auxiliary transistors than SOI substrate. The thermal coupling between the neighboring devices in SOD structures represent device miss-match in analog circuits were high degree of matching is required.