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<Article>
<Journal>
<PublisherName>OICC Press</PublisherName>
<JournalTitle>Journal of Theoretical and Applied Physics</JournalTitle>
<Issn>2251-7235</Issn>
<Volume>18</Volume>
<Issue>5</Issue>
<PubDate PubStatus="epublish">
<Year>2024</Year>
<Month>10</Month>
<Day>26</Day>
</PubDate>
</Journal>
<ArticleTitle>Spin filtering device through designing the normal/ferromagnetic/normal graphene superlattices</ArticleTitle>
<VernacularTitle></VernacularTitle>
<FirstPage></FirstPage>
<LastPage></LastPage>
<ELocationID EIdType="doi">10.57647/j.jtap.2024.1805.59</ELocationID>
<Language>EN</Language>
<AuthorList>
<Author>
<FirstName>Saeedeh</FirstName>
<LastName>Mohammadi</LastName>
<Affiliation>Department of Physics, Shahid Rajaee Teacher Training University, Tehran, Iran</Affiliation>
<Identifier Source="ORCID">https://orcid.org/0000-0003-2204-3661</Identifier>
</Author>
<Author>
<FirstName>Ayoub</FirstName>
<LastName>Esmailpour</LastName>
<Affiliation>Department of Physics, Shahid Rajaee Teacher Training University, Tehran, Iran</Affiliation>
<Identifier Source="ORCID">https://orcid.org/0000-0001-8340-7348</Identifier>
</Author>
<Author>
<FirstName>Hamed</FirstName>
<LastName>Meshkin</LastName>
<Affiliation>Department of Physics, Purdue University, Indianapolis, Indiana, USA</Affiliation>
<Identifier Source="ORCID"></Identifier>
</Author>
</AuthorList>
<PublicationType>Journal Article</PublicationType>
<History>
<PubDate PubStatus="received">
<Year>2024</Year>
<Month>10</Month>
<Day>26</Day>
</PubDate>
</History>
<Abstract>Quantum transport properties of normal/ferromagnetic/normal graphene (NG/FG/NG) superlatticesexposed to ferromagnetic graphene connected to a gate electrode are investigated via the transfermatrix method. Here, we calculate the role of parameters including well, and barrier width inthe spin current. In addition, the Fermi energy and gate voltage effects on raising and tunablespin splitting have been investigated. Calculations demonstrate that the exchange field appliedto the region of the ferromagnetic graphene device, by changing the chemical potential, resultsin an oscillatory behavior. We found that it opens a gap and indicates a metal-insulator phasetransition by enhancing unit cells (N = 100). Meanwhile, results reveal that by tuning the gatevoltage, we can control the spin currents, as a result, it may allow for the filtering of up or downspins. Further, increasing the barrier width and Fermi energy reveals that the spin current isreversible. Furthermore, this computational research found that quantum modulating behaviorby controlling wells, barrier widths, and chemical energy in the device. The results might havepotential applications in designing nano-devices and developing spintronic systems.</Abstract>
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<Object Type="keyword">
<Param Name="value">Graphene superlattice</Param>
</Object>
<Object Type="keyword">
<Param Name="value">Transfer matrix</Param>
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<Object Type="keyword">
<Param Name="value">Spin filtering</Param>
</Object>
<Object Type="keyword">
<Param Name="value">Spintronic</Param>
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