<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE ArticleSet PUBLIC "-//NLM//DTD PubMed 2.7//EN" "https://dtd.nlm.nih.gov/ncbi/pubmed/in/PubMed.dtd">
<ArticleSet>
<Article>
<Journal>
<PublisherName>OICC Press</PublisherName>
<JournalTitle>Journal of Solid Mechanics</JournalTitle>
<Issn>2008-7683</Issn>
<Volume>11</Volume>
<Issue>4</Issue>
<PubDate PubStatus="epublish">
<Year>2019</Year>
<Month>09</Month>
<Day>30</Day>
</PubDate>
</Journal>
<ArticleTitle>Displacement Fields Influence Analysis Caused by Dislocation Networks at a Three Layer System Interfaces on the Surface Topology</ArticleTitle>
<VernacularTitle></VernacularTitle>
<FirstPage>606</FirstPage>
<LastPage>614</LastPage>
<ELocationID EIdType="doi"></ELocationID>
<Language>EN</Language>
<AuthorList>
<Author>
<FirstName>A</FirstName>
<LastName>Boussaha</LastName>
<Affiliation>Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria</Affiliation>
<Identifier Source="ORCID"></Identifier>
</Author>
<Author>
<FirstName>R</FirstName>
<LastName>Makhloufi</LastName>
<Affiliation>Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria</Affiliation>
<Identifier Source="ORCID"></Identifier>
</Author>
<Author>
<FirstName>S</FirstName>
<LastName>Madani</LastName>
<Affiliation>Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria</Affiliation>
<Identifier Source="ORCID"></Identifier>
</Author>
</AuthorList>
<PublicationType>Journal Article</PublicationType>
<History>
<PubDate PubStatus="received">
<Year>2019</Year>
<Month>09</Month>
<Day>30</Day>
</PubDate>
</History>
<Abstract>This work consists in a numerically evaluation of elastic fields distribution, caused by intrinsic dislocation networks placed at a nanometric trilayers interfaces, in order to estimate their influence on the surface topology during heterostructure operation. The organization of nanostructures is ensured by the knowledge of different elastic fields caused by buried dislocation networks and calculated in the case of anisotropic elasticity. The influence of elastic fields generated by induced square and parallel dislocation networks at CdTe / GaAs / (001) GaAs trilayer interfaces was investigated. By deposition, the nanostructures organization with respect to the topology was controled.</Abstract>
<ObjectList>
<Object Type="keyword">
<Param Name="value">Dislocation</Param>
</Object>
<Object Type="keyword">
<Param Name="value">Anisotropic elasticity</Param>
</Object>
<Object Type="keyword">
<Param Name="value">Elastic field</Param>
</Object>
<Object Type="keyword">
<Param Name="value">network</Param>
</Object>
<Object Type="keyword">
<Param Name="value">Nanometric</Param>
</Object>
<Object Type="keyword">
<Param Name="value">Interface</Param>
</Object>
</ObjectList>
</Article>
</ArticleSet>