TY - EJOUR
PY - 2023
DA - November
TI - Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode
T2 - Journal of Theoretical and Applied Physics
VL - 9
L1 - https://oiccpress.com/journal-of-theoretical-and-applied-physics/article/electrical-properties-and-i-v-characteristics-of-514-dihydro-571214-tetraazapentacene-doped-schottky-barrier-diode/
DO - 10.1007/s40094-015-0191-7
N2 - AbstractThe current–voltage (I–V) characteristics of Aluminium/5,14-dihydro-5,7,12,14-tetraazapentacenes (L5H2 or DHTAPs) doped surface-type structures were investigated in air at ambient temperature and moisture. The conventional forward bias I–V method, Semi-logarithm, Cheung functions and modified Norde’s function were used to extract the diode parameters including ideality factor, series resistance and barrier height. The parameter values obtained from these four different methods were found in good agreement.
IS - 4
PB - OICC Press
KW - Barrier height, Dihydro, Ideality factor, Schottky diodes, Series resistance, Tetraazapentacenes (L5H2 or DHTAPs) doped, 12, 14, 5, 7 
EN -