TY - EJOUR
AU - Onen, Murat
AU - Turchetti, Marco
PY - 2023
DA - November
TI - Calculating the band structure of 3C-SiC using sp3d5s* + ∆ model
T2 - Journal of Theoretical and Applied Physics
VL - 13
L1 - https://oiccpress.com/journal-of-theoretical-and-applied-physics/article/calculating-the-band-structure-of-3c-sic-using-sp3d5s-%e2%88%86-model/
DO - 10.1007/s40094-019-0324-5
N2 - AbstractWe report on a semiempirical tight-binding model for 3C-SiC including the effect of sp3d5s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses.
IS - 1
PB - OICC Press
KW - Binding, Electronic band structure, Semiempirical tight, SiC 
EN -