@article{Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode_2023, volume={9}, url={https://oiccpress.com/journal-of-theoretical-and-applied-physics/article/electrical-properties-and-i-v-characteristics-of-514-dihydro-571214-tetraazapentacene-doped-schottky-barrier-diode/}, DOI={10.1007/s40094-015-0191-7}, abstractNote={AbstractThe current–voltage (I–V) characteristics of Aluminium/5,14-dihydro-5,7,12,14-tetraazapentacenes (L5H2 or DHTAPs) doped surface-type structures were investigated in air at ambient temperature and moisture. The conventional forward bias I–V method, Semi-logarithm, Cheung functions and modified Norde’s function were used to extract the diode parameters including ideality factor, series resistance and barrier height. The parameter values obtained from these four different methods were found in good agreement.}, number={4}, journal={Journal of Theoretical and Applied Physics}, publisher={OICC Press}, year={2023}, month={Nov.}, keywords={Tetraazapentacenes (L5H2 or DHTAPs) doped, 12, 14, 5, 7, Barrier height, Dihydro, Ideality factor, Schottky diodes, Series resistance} }