@article{Onen_Turchetti_2023, title={Calculating the band structure of 3C-SiC using sp3d5s* + ∆ model}, volume={13}, url={https://oiccpress.com/journal-of-theoretical-and-applied-physics/article/calculating-the-band-structure-of-3c-sic-using-sp3d5s-%e2%88%86-model/}, DOI={10.1007/s40094-019-0324-5}, abstractNote={AbstractWe report on a semiempirical tight-binding model for 3C-SiC including the effect of sp3d5s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses.}, number={1}, journal={Journal of Theoretical and Applied Physics}, publisher={OICC Press}, author={Onen, Murat and Turchetti, Marco}, year={2023}, month={Nov.}, keywords={Semiempirical tight, SiC, Binding, Electronic band structure} }