OICC Press Journal of Nanostructure in Chemistry 2193-8865 3 1 (December 2013) 2013 06 04 Room temperature photo-induced, Eu3+-doped IGZO transparent thin films fabricated using sol–gel method 10.1186/2193-8865-3-42 EN Rajagopalan Krishnan Department of Physics, B.S. Abdur Rahman University, Vandalur, ChennaiTamil Nadu, 600048, IN Jagannathan Thirumalai Department of Physics, B.S. Abdur Rahman University, Vandalur, ChennaiTamil Nadu, 600048, IN Rathinam Chandramohan Department of Physics, Sree Sevugan Annamalai College, Devakottai, Tamil Nadu, 630303, IN Journal Article 2013 06 04 Abstract Red-emitting Eu 3+ -doped indium gallium zinc oxide (IGZO) transparent thin films were fabricated using sol–gel method under UV (254-nm irradiation) in nitrogen atmosphere (inside the glove box) and thermally annealed at 500°C for 1 h. Structure, morphology, composition, and optical properties of the materials were examined using X-ray diffraction analysis, scanning electron microscope, X-ray photoelectron spectroscopy, and photoluminescence, respectively.