10.1186/2193-8865-3-42

Room temperature photo-induced, Eu3+-doped IGZO transparent thin films fabricated using sol–gel method

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  • Rajagopalan Krishnan1,
  • Jagannathan Thirumalai*1,
  • Rathinam Chandramohan2,
  1. Department of Physics, B.S. Abdur Rahman University, Vandalur, ChennaiTamil Nadu, 600048, IN
  2. Department of Physics, Sree Sevugan Annamalai College, Devakottai, Tamil Nadu, 630303, IN
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Published in Issue 04-06-2013

How to Cite

Krishnan, R., Thirumalai, J., & Chandramohan, R. (2013). Room temperature photo-induced, Eu3+-doped IGZO transparent thin films fabricated using sol–gel method. Journal of Nanostructure in Chemistry, 3(1 (December 2013). https://doi.org/10.1186/2193-8865-3-42
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Abstract

Abstract Red-emitting Eu 3+ -doped indium gallium zinc oxide (IGZO) transparent thin films were fabricated using sol–gel method under UV (254-nm irradiation) in nitrogen atmosphere (inside the glove box) and thermally annealed at 500°C for 1 h. Structure, morphology, composition, and optical properties of the materials were examined using X-ray diffraction analysis, scanning electron microscope, X-ray photoelectron spectroscopy, and photoluminescence, respectively.

Keywords

  • Oxides,
  • Annealing,
  • Photoelectron spectroscopy,
  • Luminescence
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References

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