TY - EJOUR
AU - Abuzaid, Samah
AU - Shaer, Ayham
AU - Elsaid, Mohammad
PY - 2024
DA - February
TI - Combined effects of pressure, temperature, and magnetic field on the ground state of donor impurities in a GaAs/AlGaAs quantum heterostructure
T2 - International Journal of Nano Dimension (Int. J. Nano Dimens.)
VL - 10
L1 - https://oiccpress.com/international-journal-of-nano-dimension/article/combined-effects-of-pressure-temperature-and-magnetic-field-on-the-ground-state-of-donor-impurities-in-a-gaas-algaas-quantum-heterostructure/
N2 - In the present work, the exact diagonalization method had been implemented to calculate the ground state energy of shallow donor impurity located at finite distance along the growth axis in GaAs/AlGaAs heterostructure in the presence of a magnetic field taken to be along z direction. The impurity binding energy of the ground state had been calculated as a function of confining frequency and magnetic field strength. We  found that the ground state donor binding energy (BE)  calculated at =2  and  , decreases from BE=7.59822  to BE=2.85165 , as we change the impurity position from d=0.0  to d=0.5  ,respectively .In addition, the combined effects of pressure and temperature on the binding energy, as a function of magnetic field strength and impurity position, had been shown using the effective-mass approximation. The numerical results show that the donor impurity binding energy enhances with increasing the pressure while it decreases as the temperature decreases.
IS - 4
PB - OICC Press
KW - Magnetic field, Heterostructure, Binding Energy, Donor Impurity, Exact Diagonalization Method 
EN -