TY - EJOUR
AU - Moghadam, Soheila
AU - Ghoreishi, Seyed Saleh
AU - Yousefi, Reza
AU - Adarang, Habib
PY - 2024
DA - February
TI - Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study
T2 - International Journal of Nano Dimension (Int. J. Nano Dimens.)
VL - 11
L1 - https://oiccpress.com/international-journal-of-nano-dimension/article/performance-evaluation-of-carbon-nanotube-junctionless-tunneling-field-effect-transistor-cnt-jltfet-under-torsional-strain-a-quantum-simulation-study/
N2 - In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the on- and off-currents are reduced, thought that reduction has a greater percentage in the off-current, resulting in the increase in the ON/OFF current ratio. Besides, the switching characteristics of the device including power-delay product (PDP) and intrinsic delay (τ) have been studied.
IS - 3
PB - OICC Press
KW - Band-Structure-Limited Velocity, Intrinsic Delay (τ), Mode-Space, Power-Delay-Product (PDP), Torsional Strain 
EN -