TY - EJOUR
AU - Abbaszadeh, Soheil
AU - Ghoreishi, Seyed Saleh
AU - Yousefi, Reza
AU - Adarang, Habib
PY - 2024
DA - February
TI - Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)
T2 - International Journal of Nano Dimension (Int. J. Nano Dimens.)
VL - 11
L1 - https://oiccpress.com/international-journal-of-nano-dimension/article/computational-study-of-bandgap-engineered-graphene-nano-ribbon-tunneling-field-effect-transistor-be-gnr-tfet/
N2 - By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach. Simulation results show that, compared to the conventional GNR-TFET, the BE-GNR-TFET enjoys from a better am-bipolar behavior and a higher on-current. Besides, the analog characteristic of the proposed structure such as transconductance (gm) and unity-gain frequency (ft) is also improved.
IS - 4
PB - OICC Press
KW - Density of States (DOS), Graphene Nanoribbon (GNR), Non Equilibrium Green’s Function (NEGF), Tunneling Field Effect, Unity Gain Frequency (ft) 
EN -