TY - EJOUR
AU - Ruhil, Shaifali
AU - Khanna, Vandana
AU - Dutta, Umesh
AU - Shukla, Neeraj Kumar
PY - 2024
DA - February
TI - A study of emerging semi-conductor devices for memory applications
T2 - International Journal of Nano Dimension (Int. J. Nano Dimens.)
VL - 12
L1 - https://oiccpress.com/international-journal-of-nano-dimension/article/a-study-of-emerging-semi-conductor-devices-for-memory-applications/
DO - 10.22034/ijnd.2021.680122
N2 - In this paper, a study of the existing SRAM (Static Random Access Memory) cell topologies using various FET (Field Effect Transistor) low power devices has been done. Various low power based SRAM cells have been reviewed on the basis of different topologies, technology nodes, and techniques implemented. The analysis of MOSFET(Metal Oxide Semiconductor Field Effect Transistor), FinFET( Fin Field Effect Transistor), CNTFET (Carbon Nano Tube Field Effect Transistor), and TFET (Tunnel Field Effect Transistor) based SRAM cells on the basis of parameters such as stability, leakage current, power dissipation, read/write noise margin, access time has been done. HSPICE, TCAD, Synopsys Taurus, and Cadence Virtuoso were some of the software used for simulation. The simulations were done from a few µms to 7nm technology nodes by different authors.
IS - 3
PB - OICC Press
KW - MOSFET, SRAM, TCAD, TFET, CNTFET, FinFET, Leakage Current 
EN -