@article{Abuzaid_Shaer_Elsaid_2024, title={Combined effects of pressure, temperature, and magnetic field on the ground state of donor impurities in a GaAs/AlGaAs quantum heterostructure}, volume={10}, url={https://oiccpress.com/international-journal-of-nano-dimension/article/combined-effects-of-pressure-temperature-and-magnetic-field-on-the-ground-state-of-donor-impurities-in-a-gaas-algaas-quantum-heterostructure/}, abstractNote={In the present work, the exact diagonalization method had been implemented to calculate the ground state energy of shallow donor impurity located at finite distance along the growth axis in GaAs/AlGaAs heterostructure in the presence of a magnetic field taken to be along z direction. The impurity binding energy of the ground state had been calculated as a function of confining frequency and magnetic field strength. We  found that the ground state donor binding energy (BE)  calculated at =2  and  , decreases from BE=7.59822  to BE=2.85165 , as we change the impurity position from d=0.0  to d=0.5  ,respectively .In addition, the combined effects of pressure and temperature on the binding energy, as a function of magnetic field strength and impurity position, had been shown using the effective-mass approximation. The numerical results show that the donor impurity binding energy enhances with increasing the pressure while it decreases as the temperature decreases.}, number={4}, journal={International Journal of Nano Dimension (Int. J. Nano Dimens.)}, publisher={OICC Press}, author={Abuzaid, Samah and Shaer, Ayham and Elsaid, Mohammad}, year={2024}, month={Feb.}, keywords={Binding Energy, Donor Impurity, Exact Diagonalization Method, Magnetic field, Heterostructure} }