@article{Abbaszadeh_Ghoreishi_Yousefi_Adarang_2024, title={Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)}, volume={11}, url={https://oiccpress.com/international-journal-of-nano-dimension/article/computational-study-of-bandgap-engineered-graphene-nano-ribbon-tunneling-field-effect-transistor-be-gnr-tfet/}, abstractNote={By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach. Simulation results show that, compared to the conventional GNR-TFET, the BE-GNR-TFET enjoys from a better am-bipolar behavior and a higher on-current. Besides, the analog characteristic of the proposed structure such as transconductance (gm) and unity-gain frequency (ft) is also improved.}, number={4}, journal={International Journal of Nano Dimension (Int. J. Nano Dimens.)}, publisher={OICC Press}, author={Abbaszadeh, Soheil and Ghoreishi, Seyed Saleh and Yousefi, Reza and Adarang, Habib}, year={2024}, month={Feb.}, keywords={Non Equilibrium Green’s Function (NEGF), Tunneling Field Effect, Unity Gain Frequency (ft), Density of States (DOS), Graphene Nanoribbon (GNR)} }