OICC Press International Nano Letters 2228-5326 7 3 (September 2017) 2017 08 22 Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM 10.1007/s40089-017-0217-z EN T. D. Dongale Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, IN K. V. Khot Department of Chemistry, Shivaji University, Kolhapur, 416004, IN S. V. Mohite Department of Physics, Shivaji University, Kolhapur, 416004, IN N. D. Desai Department of Chemistry, Shivaji University, Kolhapur, 416004, IN S. S. Shinde Department of Physics, Shivaji University, Kolhapur, 416004, IN V. L. Patil Department of Physics, Shivaji University, Kolhapur, 416004, IN S. A. Vanalkar Department of Physics, Shivaji University, Kolhapur, 416004, IN A. V. Moholkar Department of Physics, Shivaji University, Kolhapur, 416004, IN K. Y. Rajpure Department of Physics, Shivaji University, Kolhapur, 416004, IN P. N. Bhosale Department of Chemistry, Shivaji University, Kolhapur, 416004, IN P. S. Patil Department of Physics, Shivaji University, Kolhapur, 416004, IN School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, IN Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, 416004, IN P. K. Gaikwad Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, Kolhapur, 416004, IN R. K. Kamat Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, Kolhapur, 416004, IN Journal Article 2017 08 22 Abstract In this paper, we report the effect of the write voltage and frequency on memristor-based resistive random access memory (RRAM). The above-said parameters have been investigated on the linear drift model of the memristor. With a variation of write voltage from 0.2 to 1.2 V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz, the corresponding effects on memory window, low resistance state (LRS) and high resistance state (HRS) have been reported. Thus, the lifetime ( τ ) reliability analysis of memristor-based RRAM is carried out using the above results. It is found that the HRS is independent of the write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase the fact that the memristor possesses higher memory window and lifetime ( τ ) in the higher voltage with lower frequency region, which has been attributed to less data losses in the memory architecture.