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<!DOCTYPE ArticleSet PUBLIC "-//NLM//DTD PubMed 2.7//EN" "https://dtd.nlm.nih.gov/ncbi/pubmed/in/PubMed.dtd">
<ArticleSet>
<Article>
<Journal>
<PublisherName>OICC Press</PublisherName>
<JournalTitle>International Nano Letters</JournalTitle>
<Issn>2228-5326</Issn>
<Volume>2</Volume>
<Issue>1 (December 2012)</Issue>
<PubDate PubStatus="epublish">
<Year>2012</Year>
<Month>06</Month>
<Day>07</Day>
</PubDate>
</Journal>
<ArticleTitle>Characterization of catalytic chemical vapor-deposited SiCN thin film coatings</ArticleTitle>
<VernacularTitle></VernacularTitle>
<FirstPage></FirstPage>
<LastPage></LastPage>
<ELocationID EIdType="doi">10.1186/2228-5326-2-4</ELocationID>
<Language>EN</Language>
<AuthorList>
<Author>
<FirstName>Suresh</FirstName>
<LastName>Neethirajan</LastName>
<Affiliation>Biological Engineering, University of Guelph, Guelph, 50 Stone Road EastON, N1G 2W1, CA</Affiliation>
<Identifier Source="ORCID"></Identifier>
</Author>
<Author>
<FirstName>Takahita</FirstName>
<LastName>Ono</LastName>
<Affiliation>Graduate School of Engineering, Tohoku University, Sendai, 980-8579, JP</Affiliation>
<Identifier Source="ORCID"></Identifier>
</Author>
<Author>
<FirstName>Esashi</FirstName>
<LastName>Masayoshi</LastName>
<Affiliation>Graduate School of Engineering, Tohoku University, Sendai, 980-8579, JP</Affiliation>
<Identifier Source="ORCID"></Identifier>
</Author>
</AuthorList>
<PublicationType>Journal Article</PublicationType>
<History>
<PubDate PubStatus="received">
<Year>2012</Year>
<Month>06</Month>
<Day>07</Day>
</PubDate>
</History>
<Abstract>Abstract
Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using ammonia and hexamethyldisilazane gas sources using catalytic chemical vapor deposition process. Compositions of silicon, carbon and nitrogen in the SiCN films were varied by changing the flow rate of ammonia gas. The effect of deposition conditions on the structural, optical and mechanical properties of SiCN thin films was examined. X-ray photoelectron spectroscopy analysis indicated that the higher flow rate of ammonia gas results in higher nitrogen and lower carbon content in the deposited thin films. The measurement of stress as a function of substrate temperature in the SiCN film showed that the stress changes from compressive to tensile in the range of 275°C to 325°C. With these preliminary characterization tests, it is expected that SiCN nano-thin films can be used for developing sensors for harsh environment.</Abstract>
<ObjectList>
<Object Type="keyword">
<Param Name="value">SiCN</Param>
</Object>
<Object Type="keyword">
<Param Name="value">Catalytic chemical vapor deposition</Param>
</Object>
<Object Type="keyword">
<Param Name="value">Thin films</Param>
</Object>
<Object Type="keyword">
<Param Name="value">XPS</Param>
</Object>
</ObjectList>
</Article>
</ArticleSet>