10.1007/s40089-017-0217-z

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

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  • T. D. Dongale*1,
  • K. V. Khot2,
  • S. V. Mohite3,
  • N. D. Desai2,
  • S. S. Shinde3,
  • V. L. Patil3,
  • S. A. Vanalkar3,
  • A. V. Moholkar3,
  • K. Y. Rajpure3,
  • P. N. Bhosale2,
  • P. S. Patil4,
  • P. K. Gaikwad5,
  • R. K. Kamat5,
  1. Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, IN
  2. Department of Chemistry, Shivaji University, Kolhapur, 416004, IN
  3. Department of Physics, Shivaji University, Kolhapur, 416004, IN
  4. Department of Physics, Shivaji University, Kolhapur, 416004, IN School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, IN Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, 416004, IN
  5. Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, Kolhapur, 416004, IN
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Published in Issue 2017-08-22

How to Cite

Dongale, T. D., Khot, K. V., Mohite, S. V., Desai, N. D., Shinde, S. S., Patil, V. L., Vanalkar, S. A., Moholkar, A. V., Rajpure, K. Y., Bhosale, P. N., Patil, P. S., Gaikwad, P. K., & Kamat, R. K. (2017). Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM. International Nano Letters, 7(3 (September 2017). https://doi.org/10.1007/s40089-017-0217-z
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Abstract

Abstract In this paper, we report the effect of the write voltage and frequency on memristor-based resistive random access memory (RRAM). The above-said parameters have been investigated on the linear drift model of the memristor. With a variation of write voltage from 0.2 to 1.2 V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz, the corresponding effects on memory window, low resistance state (LRS) and high resistance state (HRS) have been reported. Thus, the lifetime ( τ ) reliability analysis of memristor-based RRAM is carried out using the above results. It is found that the HRS is independent of the write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase the fact that the memristor possesses higher memory window and lifetime ( τ ) in the higher voltage with lower frequency region, which has been attributed to less data losses in the memory architecture.

Keywords

  • Memristor,
  • RRAM,
  • Memory window,
  • Lifetime reliability,
  • Write voltage
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