OICC Press International Journal of Nano Dimension 2228-5059 15 4 (October 2024) 2024 10 10 A low leakage and high-speed phase frequency detector-charge pump designed in nano dimension based CMOS technology 10.57647/j.ijnd.2024.1504.29 EN Mohammad Amir Ansari Department of Electronics & Communication Engg., Integral University, Lucknow, India 0009-0006-2086-4166 Syed Hasan Saeed Department of Electronics & Communication Engg., Integral University, Lucknow, India 0000-0002-8194-5203 Deepak Balodi Department of Electronics & Communication Engg., BBD University, Lucknow, India 0000-0002-5188-2037 Mohd. Nauman Khan NXP India Pvt. Ltd., Bangaluru, India 0009-0006-8774-3609 Journal Article 2024 10 10 This research paper undertakes an innovative investigation into the conceptualization and execution of charge pump circuits that are specifically engineered in nano-dimension MOS transistor. In contrast to traditional Dickson-charge-pump models, the suggested configuration incorporates MOS transistors and anti-phase pumping clocks, which substantially increase output voltages and voltage pumping advantages. The PLL system's PFD, Charge Pump circuit, and PFD are dynamic components, as demonstrated by a thorough analysis of these elements on RF-simulation tool. The accuracy of the proposed methodologies through rigorous simulations, establishing them as innovative approaches for low-voltage circuitry. In addition to contributing to the advancement of knowledge regarding charge pump designs, the research offers significant insights into the synergistic functioning of these circuits within a PLL system. The simulation outcomes validate the efficacy of the novel charge pump configuration, presenting low spur attenuation, high phase margin and high loop gain for implementation in low-power electronic systems. With a particular focus on optimizing design parameters, investigating sophisticated materials and fabrication technologies, and striving for innovative applications in domains like communication devices. This study establishes a foundation for revolutionary advancements in the design of low-leakage circuits and provides opportunities for novel approaches to the evolving field of electronic technologies.