OICC Press International Journal of Nano Dimension 2228-5059 5 4 2024 02 29 Change of diffused and scattered light with surface roughness of p-type porous Silicon 10.7508/ijnd.2014.04.014 EN F. Alfeel Department of Physics, Science Faculty, Damascus University, Syria. F. Awad Department of Physics, Science Faculty, Damascus University, Syria. I. Alghoraibi Department of Physics, Science Faculty, Damascus University, Syria. F. Qamar Department of Physics, Science Faculty, Damascus University, Syria. Journal Article 2024 02 29 Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. UV-Vis-NIR Spectrophotometer with integrating sphere accessory used to measure the specular reflectance (Rspec) and scattered light (Dsca) for all samples. Changes of scattered light intensity with σ rms were studied. Theoretical and measured values were compared and they were almost the same.