OICC Press International Journal of Nano Dimension 2228-5059 15 2 (April 2024) 2024 03 05 A comprehensive investigation on electronic properties for quantum-confined Cobalt doped SiC nanotube: A DFT approach 10.57647/j.ijnd.2024.1502.15 EN Debarati Dey Roy Deptartment of Electronics and Communication Engineering, B. P. Poddar Institute of Management and Technology, 137, V. I. P Road, Kolkata-700052, West Bengal, India. 0000-0002-4704-791X Vusala Nabi Jafarova Azerbaijan State Oil and Industry University, 20 Azalig ave., AZ-1010, Baku, Azerbaijan. 0000-0002-0643-1464 Aynura Alisa Hadiyeva Azerbaijan State Oil and Industry University, 20 Azalig ave., AZ-1010, Baku, Azerbaijan. 0000-0001-7238-1066 Pradipta Roy Department of Computer Application, Dr. B. C. Roy Academy of Professional Courses, Jemua Road, Fuljhore, Durgapur-713206, West Bengal, India. 0000-0001-6169-5027 Journal Article 2024 03 05 The investigation of the thermoelectric characterization of magnetic material doped Silicon Carbide (SiC) nanotube (NT) is a challenging aspect for the researchers. Thanks to the Density Functional Theory (DFT) based formalisms help to provide accurate electronic characterization for the nanoscale 2-D models. The investigation of the Device Density of States (DDOS) of the magnetically doped SiC NT is based on the prediction of molecular and atomic level data set. Spin polarization effect is observed for this doped single wall (6,0) chiral type SiC NT. The energy band gap is lower for doped quantum-confined structure (0.98eV) compared to bulk structure (3.3 eV). The spin density approximation is based on the Hubbard U method. The observed magnetic moment for the doped structure is equal to 1.9 µB. Comparing between anti-ferromagnetic and ferromagnetic stages, the ferromagnetic stage is observed as a more stable phase.