OICC Press International Journal of Nano Dimension 2228-5059 11 4 2024 02 07 Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET) 10.57647/ EN Soheil Abbaszadeh Department of Electrical Engineering, Nour Branch, Islamic Azad University, Nour, Iran. Seyed Saleh Ghoreishi Department of Electrical Engineering, Nour Branch, Islamic Azad University, Nour, Iran. Reza Yousefi Department of Electrical Engineering, Nour Branch, Islamic Azad University, Nour, Iran. Habib Adarang Department of Electrical Engineering, Nour Branch, Islamic Azad University, Nour, Iran. Journal Article 2024 02 07 By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach. Simulation results show that, compared to the conventional GNR-TFET, the BE-GNR-TFET enjoys from a better am-bipolar behavior and a higher on-current. Besides, the analog characteristic of the proposed structure such as transconductance (gm) and unity-gain frequency (ft) is also improved.