10.57647/j.ijnd.2024.1504.31

High-K dual metal gate-nano tube (DMG-NT) field effect transistors (FETs): A possible solution to diminish the effect of temperature variation

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  • Vaibhav Purwar*1,
  1. Pranveer Singh Institute of Technology, Kanpur (Dr APJ Abdul Kalam Technical University Lucknow) Uttar Pradesh, India
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Published in Issue 2024-10-10

How to Cite

Purwar, V. (2024). High-K dual metal gate-nano tube (DMG-NT) field effect transistors (FETs): A possible solution to diminish the effect of temperature variation. International Journal of Nano Dimension, 15(4 (October 2024). https://doi.org/10.57647/j.ijnd.2024.1504.31
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Abstract

This paper provides a possible solution to minimize the effect of temperature on nano-tube (NT) FETs by applying performance  enhancers. Here high-k and dual metal gates (DMG) are used as performance boosters. The high-k downgrades the leakage issues and improves the on-state current (Ion), while dual metal gate suppresses the short-channel-effects (SCE). Simulation results reflect that Ion uplifts by 50.19% and Ioff downgrades by 53.75% at 400K with the use of DMG and high-k dielectric in NT FETs. The paper also covers the temperature-dependent comparative radio frequency(RF) performance analysis of high-k DMG NT FETs and NT FETs. The temperaturedependent performance analysis has been done for temperatures ranging from 250K to 400K using ATLAS device simulator from SILVACO.

Keywords

  • Double gate all around (DGAA),
  • Dual metal gate (DMG),
  • Gate all around (GAA),
  • High-k,
  • Nanoscale,
  • Nanotube,
  • Short channel effects (SCE)
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