High-K dual metal gate-nano tube (DMG-NT) field effect transistors (FETs): A possible solution to diminish the effect of temperature variation

Abstract

This paper provides a possible solution to minimize the effect of temperature on nano-tube (NT) FETs by applying performance  enhancers. Here high-k and dual metal gates (DMG) are used as performance boosters. The high-k downgrades the leakage issues and improves the on-state current (Ion), while dual metal gate suppresses the short-channel-effects (SCE). Simulation results reflect that Ion uplifts by 50.19% and Ioff downgrades by 53.75% at 400K with the use of DMG and high-k dielectric in NT FETs. The paper also covers the temperature-dependent comparative radio frequency(RF) performance analysis of high-k DMG NT FETs and NT FETs. The temperaturedependent performance analysis has been done for temperatures ranging from 250K to 400K using ATLAS device simulator from SILVACO.