OICC Press International Journal of Biophotonics and Biomedical Engineering (IJBBE) 2980-9037 4 1 2025 02 02 Recent Advances in ISFET-Based Biosensors for the Detection of Biomarkers: History, Principles, Gate Structure and Applications 1 30 10.71498/ijbbe.2024.976364 EN Seyed Saman Nemati Department of Biology, Faculty of Natural Sciences, University of Tabriz, Tabriz, Iran Gholamreza Dehghan Nanophysics Research Laboratory, Department of Physics, University of Tehran, Tehran, Iran Yaser Abdi Nanophysics Research Laboratory, Department of Physics, University of Tehran, Tehran, Iran Sohrab Ahmadi-Kandjani Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, Tabriz, Iran Journal Article 2025 02 02 The use of ion-sensitive field effect transistor (ISFET) sensors is one of the most prominent methods of signal detection and measurement for various analytes and biomarkers. Here the history of the ISFET sensors and their general operations are reviewed. The gate materials and structures, because of the extreme importance of gate performance and structure in sensitivity, price, reusability, durability, and stability of ISFET sensors, have been the subject of many studies. In addition, the importance of gate materials in ISFET sensor readout methods is reviewed here. The applications of ISFET as super biosensors with high sensitivity, easy manufacturing methods, sufficient stability, and cost-effectiveness in the measurement of ions, DNA, biomarkers, and analytes based on enzyme activity, are highlighted. Finally, the importance and advantage of using ISFET sensors with bioactive nanomaterial layers are emphasized, and future studies of these sensors, based on our point of view, are discussed.