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Design, simulation and analysis of high-K gate dielectric FinField effect transistor



The devices with additional gates like Fin Field effect transistor (FinFET) provide higher control on subthreshold parameters and are favorable for Ultra large-scale integration. Also, these structures provide high control on current through the channel and with minimum leakage. In this paper we designed a FinFET with high-K gate dielectric material i.e Hafnium oxide as gate oxide. A comparison of similar sized transistor with Air and Silicon dioxide as gate material is performed. The comparison is mainly in terms of performance parameters like transconductance, subthreshold slope, and drain current characteristics. There is an increase in ON current on using a high-K dielectric material and subsequently an improvement in other parameters like subthreshold slope, transconductance and intrinsic gain.