Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)
By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach. Simulation results show that, compared to the conventional GNR-TFET, the BE-GNR-TFET enjoys from a better am-bipolar behavior and a higher on-current. Besides, the analog characteristic of the proposed structure such as transconductance (gm) and unity-gain frequency (ft) is also improved.