TY - EJOUR
AU - Daghighi, Arash
AU - Hoseini-Teshnizi, Jafar
AU - Amini, GholamReza
PY - 2024
DA - February
TI - A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering
T2 - Majlesi Journal of Electrical Engineering
VL - 7
L1 - https://oiccpress.com/Majlesi-Journal-of-Electrical-Engineering/article/a-novel-silicon-on-diamond-structure-to-improve-drain-induced-barrier-lowering/
N2 - A silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g. SiO2 is added on top of the buried insulator and partially covers the diamond. The second insulating material has lower electrical permittivity. Therefore the fringing field capacitance is smaller. Simulation results of 22 nm silicon-on-diamond transistor shows 18% improvement in DIBL comparing with conventional SOD structure. Lattice temperature increase of 5% is observed in the new structure compared with the conventional SOD.
IS - 1
PB - OICC Press
KW - Silicon on Diamond, MOSFET. Hydrodynamic Model, Drain Induced Barrier Lowering, Ultra Thin Body 
EN -