TY - EJOUR
AU - Nooralizadeh, Hamid
AU - Daryan, Behnam Babazadeh
PY - 2024
DA - February
TI - A high-gain, low-noise 3.1–10.6 GHz ultra-wideband LNA in a 0.18μm CMOS
T2 - Majlesi Journal of Electrical Engineering
VL - 11
L1 - https://oiccpress.com/Majlesi-Journal-of-Electrical-Engineering/article/a-high-gain-low-noise-3-1-10-6-ghz-ultra-wideband-lna-in-a-0-18%ce%bcm-cmos/
N2 - An ultra-wideband (UWB) common gate-common source (CG-CS) low-noise amplifier (LNA) in a 0.18μm CMOS technology is presented in this paper. To obtain a high and flat power gain with low noise and good input impedance matching in the entire 3.1–10.6 GHz UWB band among low power consumption, a capacitive cross-coupling fully differential amplifier with the current-reuse technique is proposed. The current–reuse technique is used to achieve a wideband and reduce power consumption. The capacitor cross coupling technique is used to gm-boosting and hence to improve the NF of the amplifier. Therefore, the dependency between noise figure (NF) and input impedance matching is reduced. The proposed CG-CS amplifier has a fairly low NF compared with the other previous works in similar technology. In addition, a good power gain over all bandwidth and a high isolation with good input/output impedance matching are achieved. The minimum NF is 1.8 dB, the maximum power gain is 14.2 dB, the inverse gain is 
IS - 2
PB - OICC Press
KW - LNA, UWB, CMOS technology, Current-reuse technique. Capacitive cross-coupling technique, CG-CS amplifier 
EN -