@article{Talebipour_Keshavarzian_2024, title={Current-Mode High-Precision Full-Wave Rectifier Based on Carbon Nanotube Field Effect Transistors}, volume={9}, url={https://oiccpress.com/Majlesi-Journal-of-Electrical-Engineering/article/current-mode-high-precision-full-wave-rectifier-based-on-carbon-nanotube-field-effect-transistors/}, abstractNote={Carbon nanotube field effect transistors (CNTFET) with extraordinary properties such as high carrier mobility, excellent thermal conductivity and high current carrying capability could be seen as a good replacement for CMOS technology. By connecting gate and drain in carbon nanotube field effect transistor, this device operates as a diode, similar to a diode-connected transistor in a silicon device. This paper presents a novel design of a high performance current mode (CM) precision full-wave rectifier by using just four diode-tied carbon nanotube field effect transistors. All simulations have been performed in HSPICE, and show that this circuit has an excellent performance at high frequencies.}, number={3}, journal={Majlesi Journal of Electrical Engineering}, publisher={OICC Press}, author={Talebipour, Neda and Keshavarzian, Peiman}, year={2024}, month={Feb.}, keywords={Modified PWM method, Carbon Nanotube Field Effect Transistors, current mode, Precision Full-Wave Rectifier} }